Browsing by Author
Capellini, Giovanni
Showing results 1 to 8 of 8
Issue Date | Title | Author(s) |
May-2009 | Agglomeration process in thin silicon-, strained silicon-, and silicongermanium-on-insulator substrates | Capellini, Giovanni; Ciasca, Gabriele; De Seta, Monica; Notargiacomo, Andrea; Evangelisti, Florestano, et al |
Dec-2009 | Atomic-scale patterning of hydrogen terminated Ge(001) by scanningtunneling microscopy | Scappucci, Giordano; Capellini, Giovanni; Lee, W. C. T.; Simmons, M. Y. |
Aug-2009 | Conduction band intersubband transitions in Ge/SiGe quantum wells | De Seta, Monica; Capellini, Giovanni; Busby, Yan; Evangelisti, Florestano; Ortolani, Michele, et al |
Dec-2009 | Influence of encapsulation temperature on Ge:P delta-doped layers | Scappucci, Giordano; Capellini, Giovanni; Simmons, M. Y. |
Aug-2009 | Island and wetting-layer intermixing in the Ge/Si(001) system uponcapping | De Seta, Monica; Capellini, Giovanni; Evangelisti, Florestano |
2009 | N-type SiGe heterostructures for THz intersubband transitions | De Seta, Monica; Capellini, Giovanni; Evangelisti, Florestano; Busby, Yan |
2009 | Terahertz intersubband absorption and conduction band alignment inn-type Si/SiGe multiple quantum wells | Ciasca, Gabriele; De Seta, Monica; Capellini, Giovanni; Evangelisti, Florestano; Ortolani, Michele, et al |
Apr-2009 | Ultradense phosphorus in germanium delta-doped layers | Scappucci, Giordano; Capellini, Giovanni; Lee, W. C. T.; Simmons, M. Y. |