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Title: Ultradense phosphorus in germanium delta-doped layers
Authors: Scappucci, Giordano
Capellini, Giovanni
Lee, W. C. T.
Simmons, M. Y.
Keywords: SILICON
Issue Date: Apr-2009
Publisher: American Institute of Physics
Abstract: Phosphorus (P) in germanium (Ge) delta-doped layers are fabricated inultrahigh vacuum by adsorption of phosphine molecules onto anatomically flat clean Ge(001) surface followed by thermal incorporationof P into the lattice and epitaxial Ge overgrowth by molecular beamepitaxy. Structural and electrical characterizations show that P atomsare confined, with minimal diffusion, into an ultranarrow 2-nm-widelayer with an electrically active sheet carrier concentration of4x10(13) cm(-2) at 4.2 K. These results open up the possibility ofultranarrow source/drain regions with unprecedented carrier densitiesfor Ge n-channel field effect transistors.
ISSN: 0003-6951
DOI: 10.1063/1.3123391
Appears in Collections:A - Articolo su rivista
X_Dipartimento di Fisica 'Edoardo Amaldi'

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