Please use this identifier to cite or link to this item: http://hdl.handle.net/2307/404
Title: Ultradense phosphorus in germanium delta-doped layers
Authors: Scappucci, Giordano
Capellini, Giovanni
Lee, W. C. T.
Simmons, M. Y.
Keywords: SILICON
MOSFETS
Issue Date: Apr-2009
Publisher: American Institute of Physics
Abstract: Phosphorus (P) in germanium (Ge) delta-doped layers are fabricated inultrahigh vacuum by adsorption of phosphine molecules onto anatomically flat clean Ge(001) surface followed by thermal incorporationof P into the lattice and epitaxial Ge overgrowth by molecular beamepitaxy. Structural and electrical characterizations show that P atomsare confined, with minimal diffusion, into an ultranarrow 2-nm-widelayer with an electrically active sheet carrier concentration of4x10(13) cm(-2) at 4.2 K. These results open up the possibility ofultranarrow source/drain regions with unprecedented carrier densitiesfor Ge n-channel field effect transistors.
URI: http://hdl.handle.net/2307/404
ISSN: 0003-6951
DOI: 10.1063/1.3123391
Appears in Collections:A - Articolo su rivista
X_Dipartimento di Fisica 'Edoardo Amaldi'

Files in This Item:
File Description SizeFormat Existing users please Login
Gedeltalayer_APL_09.pdf362.05 kBAdobe PDF    Request a copy
SFX Query Show full item record Recommend this item

Page view(s)

1
checked on Aug 4, 2020

Google ScholarTM

Check

Altmetric

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.