Please use this identifier to cite or link to this item:
http://hdl.handle.net/2307/404
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Scappucci, Giordano | - |
dc.contributor.author | Capellini, Giovanni | - |
dc.contributor.author | Lee, W. C. T. | - |
dc.contributor.author | Simmons, M. Y. | - |
dc.date.accessioned | 2010-09-08T10:59:58Z | - |
dc.date.available | 2010-09-08T10:59:58Z | - |
dc.date.issued | 2009-04 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/2307/404 | - |
dc.description.abstract | Phosphorus (P) in germanium (Ge) delta-doped layers are fabricated inultrahigh vacuum by adsorption of phosphine molecules onto anatomically flat clean Ge(001) surface followed by thermal incorporationof P into the lattice and epitaxial Ge overgrowth by molecular beamepitaxy. Structural and electrical characterizations show that P atomsare confined, with minimal diffusion, into an ultranarrow 2-nm-widelayer with an electrically active sheet carrier concentration of4x10(13) cm(-2) at 4.2 K. These results open up the possibility ofultranarrow source/drain regions with unprecedented carrier densitiesfor Ge n-channel field effect transistors. | en |
dc.language.iso | en | en |
dc.publisher | American Institute of Physics | en |
dc.relation.ispartof | Applied Physics Letters | en |
dc.subject | SILICON | en |
dc.subject | MOSFETS | en |
dc.title | Ultradense phosphorus in germanium delta-doped layers | en |
dc.type | Article | en |
dc.subject.miur | Settori Disciplinari MIUR::Scienze fisiche::FISICA DELLA MATERIA | en |
dc.subject.miur | Scienze fisiche | - |
dc.subject.isicrui | Categorie ISI-CRUI::Scienze fisiche::Applied Physics/Condensed Matter/Materials Science | en |
dc.subject.isicrui | Scienze fisiche | - |
dc.subject.anagraferoma3 | Scienze fisiche | en |
dc.relation.volumenumber | 94 | en |
dc.relation.pagenumber | 162106 | en |
dc.identifier.doi | 10.1063/1.3123391 | - |
dc.relation.issuenumber | 16 | en |
dc.description.romatrecurrent | Dipartimento di Fisica 'Edoardo Amaldi' | * |
item.grantfulltext | restricted | - |
item.fulltext | With Fulltext | - |
item.languageiso639-1 | other | - |
Appears in Collections: | A - Articolo su rivista X_Dipartimento di Fisica 'Edoardo Amaldi' |
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File | Description | Size | Format | Existing users please Login |
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Gedeltalayer_APL_09.pdf | 362.05 kB | Adobe PDF | Request a copy |
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