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http://hdl.handle.net/2307/404
Title: | Ultradense phosphorus in germanium delta-doped layers | Authors: | Scappucci, Giordano Capellini, Giovanni Lee, W. C. T. Simmons, M. Y. |
Keywords: | SILICON MOSFETS |
Issue Date: | Apr-2009 | Publisher: | American Institute of Physics | Abstract: | Phosphorus (P) in germanium (Ge) delta-doped layers are fabricated inultrahigh vacuum by adsorption of phosphine molecules onto anatomically flat clean Ge(001) surface followed by thermal incorporationof P into the lattice and epitaxial Ge overgrowth by molecular beamepitaxy. Structural and electrical characterizations show that P atomsare confined, with minimal diffusion, into an ultranarrow 2-nm-widelayer with an electrically active sheet carrier concentration of4x10(13) cm(-2) at 4.2 K. These results open up the possibility ofultranarrow source/drain regions with unprecedented carrier densitiesfor Ge n-channel field effect transistors. | URI: | http://hdl.handle.net/2307/404 | ISSN: | 0003-6951 | DOI: | 10.1063/1.3123391 |
Appears in Collections: | A - Articolo su rivista X_Dipartimento di Fisica 'Edoardo Amaldi' |
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