Please use this identifier to cite or link to this item: http://hdl.handle.net/2307/317
Title: Terahertz intersubband absorption and conduction band alignment inn-type Si/SiGe multiple quantum wells
Authors: Ciasca, Gabriele
De Seta, Monica
Capellini, Giovanni
Evangelisti, Florestano
Ortolani, Michele
Virgilio, Michele
Grosso, Giuseppe
Nucara, Alessandro
Calvani, Paolo
Keywords: CASCADE EMITTERS
ON-INSULATOR
ELECTROLUMINESCENCE
HETEROSTRUCTURES
LINEWIDTH
DEVICES
LASER
GAAS
SI
Issue Date: 2009
Publisher: American phisical society
Abstract: Absorption due to conduction intersubband transitions is studied inn-type s-Si/SiGe multiquantum wells (MQW) of different well widths andbarrier composition grown by UHV-chemical vapor deposition (CVD). Themeasured intersubband transition energies are compared with thetheoretical results of a tight-binding model which provides theelectronic band structure of the complete MQW system throughout thewhole Brillouin zone. Our findings demonstrate both the high quality ofthe CVD grown MQWs and the effectiveness of the adopted tight-bindingmodel in describing band profiles and electronic structures of SiGemultilayer systems. In particular we have evaluated the conduction bandoffsets in the investigated structures.
URI: http://hdl.handle.net/2307/317
ISSN: 1098-0121
DOI: 10.1103/PhysRevB.79.085302
Appears in Collections:A - Articolo su rivista
X_Dipartimento di Fisica 'Edoardo Amaldi'

Files in This Item:
File Description SizeFormat Existing users please Login
09-PRB-79-085302.pdf426.1 kBAdobe PDF    Request a copy
SFX Query Show full item record Recommend this item

Google ScholarTM

Check

Altmetric

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.