Please use this identifier to cite or link to this item: http://hdl.handle.net/2307/406
Title: Atomic-scale patterning of hydrogen terminated Ge(001) by scanningtunneling microscopy
Authors: Scappucci, Giordano
Capellini, Giovanni
Lee, W. C. T.
Simmons, M. Y.
Keywords: GE(100) SURFACES
DEVICE FABRICATION
PROBE MICROSCOPY
SILICON
LITHOGRAPHY
TEMPERATURE
DESORPTION
SI(100)
MOSFETS
STM
Issue Date: Dec-2009
Publisher: IOP Publishing LTD
Abstract: In this paper we demonstrate atomic-scale lithography on hydrogenterminated Ge(001). The lithographic patterns were obtained byselectively desorbing hydrogen atoms from a H resist layer adsorbed ona clean, atomically flat Ge(001) surface with a scanning tunnelingmicroscope tip operating in ultra-high vacuum. The influence of thetip-to-sample bias on the lithographic process have been investigated.Lithographic patterns with feature-sizes from 200 to 1.8 nm have beenachieved by varying the tip-to-sample bias. These results open up thepossibility of a scanning-probe lithography approach to the fabricationof future atomic-scale devices in germanium.
URI: http://hdl.handle.net/2307/406
ISSN: 0957-4484
DOI: 10.1088/0957-4484/20/49/495302
metadata.dc.identifier.url: http://arxiv.org/abs/0912.0754
Appears in Collections:A - Articolo su rivista
X_Dipartimento di Fisica 'Edoardo Amaldi'

Files in This Item:
File Description SizeFormat Existing users please Login
GeHLitho_NANOT_09.pdf1.06 MBAdobe PDF    Request a copy
SFX Query Show full item record Recommend this item

Page view(s)

1
checked on Aug 10, 2020

Google ScholarTM

Check

Altmetric

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.