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http://hdl.handle.net/2307/406
Title: | Atomic-scale patterning of hydrogen terminated Ge(001) by scanningtunneling microscopy | Authors: | Scappucci, Giordano Capellini, Giovanni Lee, W. C. T. Simmons, M. Y. |
Keywords: | GE(100) SURFACES DEVICE FABRICATION PROBE MICROSCOPY SILICON LITHOGRAPHY TEMPERATURE DESORPTION SI(100) MOSFETS STM |
Issue Date: | Dec-2009 | Publisher: | IOP Publishing LTD | Abstract: | In this paper we demonstrate atomic-scale lithography on hydrogenterminated Ge(001). The lithographic patterns were obtained byselectively desorbing hydrogen atoms from a H resist layer adsorbed ona clean, atomically flat Ge(001) surface with a scanning tunnelingmicroscope tip operating in ultra-high vacuum. The influence of thetip-to-sample bias on the lithographic process have been investigated.Lithographic patterns with feature-sizes from 200 to 1.8 nm have beenachieved by varying the tip-to-sample bias. These results open up thepossibility of a scanning-probe lithography approach to the fabricationof future atomic-scale devices in germanium. | URI: | http://hdl.handle.net/2307/406 | ISSN: | 0957-4484 | DOI: | 10.1088/0957-4484/20/49/495302 | metadata.dc.identifier.url: | http://arxiv.org/abs/0912.0754 |
Appears in Collections: | A - Articolo su rivista X_Dipartimento di Fisica 'Edoardo Amaldi' |
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GeHLitho_NANOT_09.pdf | 1.06 MB | Adobe PDF | Request a copy |
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