Please use this identifier to cite or link to this item: http://hdl.handle.net/2307/344
Title: Agglomeration process in thin silicon-, strained silicon-, and silicongermanium-on-insulator substrates
Authors: Capellini, Giovanni
Ciasca, Gabriele
De Seta, Monica
Notargiacomo, Andrea
Evangelisti, Florestano
Nardone, Michele
Keywords: BURIED SIO2
VOLTAGE
GROWTH
LAYER
FILMS
SIGE
Issue Date: May-2009
Publisher: American Institute of Physics
Abstract: In this paper we present a comparative study of the agglomeration process in silicon-on-insulator (SOI), silicon germanium-om-insulator(SGOI), and strained SOI (SSOI) thin layers under thermal annealing inultrahigh vacuum. In particular, we provide the first evidence and characterization of agglomeration in SGOI and SSOI substrates. A common agglomeration dynamics is observed in all the substrates investigated,with the semiconductor-on-insulator layer thickness being the main parameter governing it. These findings provide a better understanding of the surface-energy-driven dewetting phenomenon in semiconductor layers and allow us to single out the influence of the surface and stress energies on the void formation and evolution, as well as on the size and density of the agglomerated islands.
URI: http://hdl.handle.net/2307/344
ISSN: 0021-8979
DOI: 10.1063/1.3117837
Appears in Collections:A - Articolo su rivista
X_Dipartimento di Fisica 'Edoardo Amaldi'

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