Please use this identifier to cite or link to this item: http://hdl.handle.net/2307/405
Title: Influence of encapsulation temperature on Ge:P delta-doped layers
Authors: Scappucci, Giordano
Capellini, Giovanni
Simmons, M. Y.
Keywords: SILICON
FABRICATION
GERMANIUM
MOSFETS
SURFACE
Issue Date: Dec-2009
Publisher: American Physical Society
Abstract: We present a systematic study of the influence of the encapsulationtemperature on dopant confinement and electrical properties of Ge:Pdelta-doped layers. For increasing growth temperature we observe anenhancement of the electrical properties accompanied by an increasedsegregation of the phosphorous donors, resulting in a slight broadeningof the delta layer. We demonstrate that a step-flow growth achieved atsimilar to 530 degrees C provides the best compromise between highcrystal quality and minimal dopant redistribution, with an electronmobility similar to 128 cm(2)/Vs at a carrier density 1.3x10(14)cm(-2), and a 4.2 K phase coherence length of similar to 180 nm.
URI: http://hdl.handle.net/2307/405
ISSN: 1098-0121
DOI: 10.1103/PhysRevB.80.233202
metadata.dc.identifier.url: http://arxiv.org/abs/0912.0755
Appears in Collections:A - Articolo su rivista
X_Dipartimento di Fisica 'Edoardo Amaldi'

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