Please use this identifier to cite or link to this item: http://hdl.handle.net/2307/405
DC FieldValueLanguage
dc.contributor.authorScappucci, Giordano-
dc.contributor.authorCapellini, Giovanni-
dc.contributor.authorSimmons, M. Y.-
dc.date.accessioned2010-09-08T11:06:50Z-
dc.date.available2010-09-08T11:06:50Z-
dc.date.issued2009-12-
dc.identifier.issn1098-0121-
dc.identifier.urihttp://hdl.handle.net/2307/405-
dc.description.abstractWe present a systematic study of the influence of the encapsulationtemperature on dopant confinement and electrical properties of Ge:Pdelta-doped layers. For increasing growth temperature we observe anenhancement of the electrical properties accompanied by an increasedsegregation of the phosphorous donors, resulting in a slight broadeningof the delta layer. We demonstrate that a step-flow growth achieved atsimilar to 530 degrees C provides the best compromise between highcrystal quality and minimal dopant redistribution, with an electronmobility similar to 128 cm(2)/Vs at a carrier density 1.3x10(14)cm(-2), and a 4.2 K phase coherence length of similar to 180 nm.en
dc.language.isoenen
dc.publisherAmerican Physical Societyen
dc.relation.ispartofPhysical Review Ben
dc.subjectSILICONen
dc.subjectFABRICATIONen
dc.subjectGERMANIUMen
dc.subjectMOSFETSen
dc.subjectSURFACEen
dc.titleInfluence of encapsulation temperature on Ge:P delta-doped layersen
dc.typeArticleen
dc.subject.miurSettori Disciplinari MIUR::Scienze fisiche::FISICA DELLA MATERIAen
dc.subject.isicruiCategorie ISI-CRUI::Scienze fisiche::Applied Physics/Condensed Matter/Materials Scienceen
dc.subject.anagraferoma3Scienze fisicheen
dc.relation.volumenumber80en
dc.relation.pagenumber233202-1 - 233202-4en
dc.identifier.urlhttp://arxiv.org/abs/0912.0755-
dc.identifier.doi10.1103/PhysRevB.80.233202-
dc.relation.issuenumber23en
item.languageiso639-1other-
item.fulltextWith Fulltext-
item.grantfulltextrestricted-
Appears in Collections:A - Articolo su rivista
X_Dipartimento di Fisica 'Edoardo Amaldi'
Files in This Item:
File Description SizeFormat Existing users please Login
DeltaGevsTemp_PRB_09.pdf414.01 kBAdobe PDF    Request a copy
SFX Query Show simple item record Recommend this item

Page view(s)

6
checked on Sep 20, 2020

Google ScholarTM

Check

Altmetric

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.