Please use this identifier to cite or link to this item:
http://hdl.handle.net/2307/405
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Scappucci, Giordano | - |
dc.contributor.author | Capellini, Giovanni | - |
dc.contributor.author | Simmons, M. Y. | - |
dc.date.accessioned | 2010-09-08T11:06:50Z | - |
dc.date.available | 2010-09-08T11:06:50Z | - |
dc.date.issued | 2009-12 | - |
dc.identifier.issn | 1098-0121 | - |
dc.identifier.uri | http://hdl.handle.net/2307/405 | - |
dc.description.abstract | We present a systematic study of the influence of the encapsulationtemperature on dopant confinement and electrical properties of Ge:Pdelta-doped layers. For increasing growth temperature we observe anenhancement of the electrical properties accompanied by an increasedsegregation of the phosphorous donors, resulting in a slight broadeningof the delta layer. We demonstrate that a step-flow growth achieved atsimilar to 530 degrees C provides the best compromise between highcrystal quality and minimal dopant redistribution, with an electronmobility similar to 128 cm(2)/Vs at a carrier density 1.3x10(14)cm(-2), and a 4.2 K phase coherence length of similar to 180 nm. | en |
dc.language.iso | en | en |
dc.publisher | American Physical Society | en |
dc.relation.ispartof | Physical Review B | en |
dc.subject | SILICON | en |
dc.subject | FABRICATION | en |
dc.subject | GERMANIUM | en |
dc.subject | MOSFETS | en |
dc.subject | SURFACE | en |
dc.title | Influence of encapsulation temperature on Ge:P delta-doped layers | en |
dc.type | Article | en |
dc.subject.miur | Settori Disciplinari MIUR::Scienze fisiche::FISICA DELLA MATERIA | en |
dc.subject.miur | Scienze fisiche | - |
dc.subject.isicrui | Categorie ISI-CRUI::Scienze fisiche::Applied Physics/Condensed Matter/Materials Science | en |
dc.subject.isicrui | Scienze fisiche | - |
dc.subject.anagraferoma3 | Scienze fisiche | en |
dc.relation.volumenumber | 80 | en |
dc.relation.pagenumber | 233202-1 - 233202-4 | en |
dc.identifier.url | http://arxiv.org/abs/0912.0755 | - |
dc.identifier.doi | 10.1103/PhysRevB.80.233202 | - |
dc.relation.issuenumber | 23 | en |
dc.description.romatrecurrent | Dipartimento di Fisica 'Edoardo Amaldi' | * |
item.fulltext | With Fulltext | - |
item.grantfulltext | restricted | - |
item.languageiso639-1 | other | - |
Appears in Collections: | A - Articolo su rivista X_Dipartimento di Fisica 'Edoardo Amaldi' |
Files in This Item:
File | Description | Size | Format | Existing users please Login |
---|---|---|---|---|
DeltaGevsTemp_PRB_09.pdf | 414.01 kB | Adobe PDF | Request a copy |
Page view(s)
65
checked on Mar 28, 2024
Download(s)
9
checked on Mar 28, 2024
Google ScholarTM
Check
Altmetric
Altmetric
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.