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http://hdl.handle.net/2307/363
Title: | Influence of the interface on the electronic channel switching of a Fe-Ag thin film on a Si substrate | Authors: | Alonso, J. Fdez-Gubieda, M. L. Sarmiento, G. Barandiaran, J. M. Svalov, A. Orue, I. Chaboy, J. Fernandez Barquin, L. Meneghini, Carlo Neisius, T. Kawamura, N. |
Keywords: | Heterostructures Magnetoresistance TEM FeAg |
Issue Date: | 25-Aug-2009 | Publisher: | American Institute of Physics | Abstract: | FexAg100-x granular thin films, being 20 < x < 70, were prepared by pulsed laser deposition. The thermal evolution of the electric resistance shows a dramatic drop in the range of 200 < T < 300 K, completely reversible with temperature and associated to a current switching between the granular thin film and its Si substrate. High resolution transmission electron microscopy measurements have revealed an amorphous interface between the thin film and the substrate, and x-ray absorption spectroscopy studies have demonstrated an electronic localization associated to the Fe atoms in this interface, which is intrinsically responsible for the current switching. | URI: | http://hdl.handle.net/2307/363 | ISSN: | 0003-6951 | DOI: | 10.1063/1.3205124 |
Appears in Collections: | A - Articolo su rivista X_Dipartimento di Fisica 'Edoardo Amaldi' |
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