Please use this identifier to cite or link to this item: http://hdl.handle.net/2307/363
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dc.contributor.authorAlonso, J.-
dc.contributor.authorFdez-Gubieda, M. L.-
dc.contributor.authorSarmiento, G.-
dc.contributor.authorBarandiaran, J. M.-
dc.contributor.authorSvalov, A.-
dc.contributor.authorOrue, I.-
dc.contributor.authorChaboy, J.-
dc.contributor.authorFernandez Barquin, L.-
dc.contributor.authorMeneghini, Carlo-
dc.contributor.authorNeisius, T.-
dc.contributor.authorKawamura, N.-
dc.date.accessioned2010-07-28T12:53:36Z-
dc.date.available2010-07-28T12:53:36Z-
dc.date.issued2009-08-25-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/2307/363-
dc.description.abstractFexAg100-x granular thin films, being 20 < x < 70, were prepared by pulsed laser deposition. The thermal evolution of the electric resistance shows a dramatic drop in the range of 200 < T < 300 K, completely reversible with temperature and associated to a current switching between the granular thin film and its Si substrate. High resolution transmission electron microscopy measurements have revealed an amorphous interface between the thin film and the substrate, and x-ray absorption spectroscopy studies have demonstrated an electronic localization associated to the Fe atoms in this interface, which is intrinsically responsible for the current switching.en
dc.language.isoenen
dc.publisherAmerican Institute of Physicsen
dc.relation.ispartofApplied Physics Lettersen
dc.rightsAmerican Institute of Physicsen
dc.subjectHeterostructuresen
dc.subjectMagnetoresistanceen
dc.subjectTEMen
dc.subjectFeAgen
dc.titleInfluence of the interface on the electronic channel switching of a Fe-Ag thin film on a Si substrateen
dc.typeArticleen
dc.subject.miurSettori Disciplinari MIUR::Scienze fisiche::FISICA DELLA MATERIAen
dc.subject.miurScienze fisiche-
dc.subject.isicruiCategorie ISI-CRUI::Scienze fisiche::Applied Physics/Condensed Matter/Materials Scienceen
dc.subject.isicruiScienze fisiche-
dc.subject.anagraferoma3Scienze fisicheen
dc.relation.volumenumber95en
dc.relation.pagenumber082103en
dc.identifier.doi10.1063/1.3205124-
dc.relation.issuenumber8en
dc.description.romatrecurrentDipartimento di Fisica 'Edoardo Amaldi'*
item.grantfulltextrestricted-
item.fulltextWith Fulltext-
item.languageiso639-1other-
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