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|Title:||Influence of the interface on the electronic channel switching of a Fe-Ag thin film on a Si substrate||Authors:||Alonso, J.
Fdez-Gubieda, M. L.
Barandiaran, J. M.
Fernandez Barquin, L.
|Issue Date:||25-Aug-2009||Publisher:||American Institute of Physics||Abstract:||FexAg100-x granular thin films, being 20 < x < 70, were prepared by pulsed laser deposition. The thermal evolution of the electric resistance shows a dramatic drop in the range of 200 < T < 300 K, completely reversible with temperature and associated to a current switching between the granular thin film and its Si substrate. High resolution transmission electron microscopy measurements have revealed an amorphous interface between the thin film and the substrate, and x-ray absorption spectroscopy studies have demonstrated an electronic localization associated to the Fe atoms in this interface, which is intrinsically responsible for the current switching.||URI:||http://hdl.handle.net/2307/363||ISSN:||0003-6951||DOI:||10.1063/1.3205124|
|Appears in Collections:||A - Articolo su rivista|
X_Dipartimento di Fisica 'Edoardo Amaldi'
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