Please use this identifier to cite or link to this item: http://hdl.handle.net/2307/363
Title: Influence of the interface on the electronic channel switching of a Fe-Ag thin film on a Si substrate
Authors: Alonso, J.
Fdez-Gubieda, M. L.
Sarmiento, G.
Barandiaran, J. M.
Svalov, A.
Orue, I.
Chaboy, J.
Fernandez Barquin, L.
Meneghini, Carlo
Neisius, T.
Kawamura, N.
Keywords: Heterostructures
Magnetoresistance
TEM
FeAg
Issue Date: 25-Aug-2009
Publisher: American Institute of Physics
Abstract: FexAg100-x granular thin films, being 20 < x < 70, were prepared by pulsed laser deposition. The thermal evolution of the electric resistance shows a dramatic drop in the range of 200 < T < 300 K, completely reversible with temperature and associated to a current switching between the granular thin film and its Si substrate. High resolution transmission electron microscopy measurements have revealed an amorphous interface between the thin film and the substrate, and x-ray absorption spectroscopy studies have demonstrated an electronic localization associated to the Fe atoms in this interface, which is intrinsically responsible for the current switching.
URI: http://hdl.handle.net/2307/363
ISSN: 0003-6951
DOI: 10.1063/1.3205124
Appears in Collections:A - Articolo su rivista
X_Dipartimento di Fisica 'Edoardo Amaldi'

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