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http://hdl.handle.net/2307/347
Titolo: | N-type SiGe heterostructures for THz intersubband transitions | Autori: | De Seta, Monica Capellini, Giovanni Evangelisti, Florestano Busby, Yan |
Parole chiave: | Ge-Si alloys nanostructure |
Data di pubblicazione: | 2009 | Editore: | IEEE | Pagine: | 513-514 | Abstract: | Research on band-gap engineering of Silicon-Germanium heterostructures for the realization of Quantum Cascade (QC) structures emitting in the Terahertz (THz) spectral region has recently attracted a vast interest. While several successful attempts have been reported using hole-based (p-type) intersubband transitions, very few results have been published on systems exploiting electrons (n-type). In this work we present the optical and structural characterization of n-type heterostructures made either of tensely-strained Si (sSi) quantum well (QW) confined between low Ge content Si1-xGex barriers [0.2<x<0.5] or of compressively-strained Ge (sGe) QW confined between high Ge content Si1-xGex barriers [0.8<x<0.9]. The structural and morphological characterizations of the samples have been made by atomic force microscopy (AFM), X-ray photoemission spectroscopy (XPS), transmission electron microscopy (TEM), and Raman spectroscopy. Intersubband transitions have been experimentally investigated by absorption spectroscopy and compared with the theoretical results of a tight-binding model, which provides the electronic band structure of the complete multi quantum well system throughout the whole Brillouin zone. | URI: | http://hdl.handle.net/2307/347 | ISBN: | 978-1-4244-4832-6 | ISSN: | 1944-9399 |
È visualizzato nelle collezioni: | X_Dipartimento di Fisica 'Edoardo Amaldi' ATC - Atti di Convegno |
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