Please use this identifier to cite or link to this item:
http://hdl.handle.net/2307/347
DC Field | Value | Language |
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dc.contributor.author | De Seta, Monica | - |
dc.contributor.author | Capellini, Giovanni | - |
dc.contributor.author | Evangelisti, Florestano | - |
dc.contributor.author | Busby, Yan | - |
dc.date.accessioned | 2010-07-26T10:03:15Z | - |
dc.date.available | 2010-07-26T10:03:15Z | - |
dc.date.issued | 2009 | - |
dc.identifier.isbn | 978-1-4244-4832-6 | - |
dc.identifier.issn | 1944-9399 | - |
dc.identifier.uri | http://hdl.handle.net/2307/347 | - |
dc.description.abstract | Research on band-gap engineering of Silicon-Germanium heterostructures for the realization of Quantum Cascade (QC) structures emitting in the Terahertz (THz) spectral region has recently attracted a vast interest. While several successful attempts have been reported using hole-based (p-type) intersubband transitions, very few results have been published on systems exploiting electrons (n-type). In this work we present the optical and structural characterization of n-type heterostructures made either of tensely-strained Si (sSi) quantum well (QW) confined between low Ge content Si1-xGex barriers [0.2<x<0.5] or of compressively-strained Ge (sGe) QW confined between high Ge content Si1-xGex barriers [0.8<x<0.9]. The structural and morphological characterizations of the samples have been made by atomic force microscopy (AFM), X-ray photoemission spectroscopy (XPS), transmission electron microscopy (TEM), and Raman spectroscopy. Intersubband transitions have been experimentally investigated by absorption spectroscopy and compared with the theoretical results of a tight-binding model, which provides the electronic band structure of the complete multi quantum well system throughout the whole Brillouin zone. | en |
dc.language.iso | en | en |
dc.publisher | IEEE | en |
dc.subject | Ge-Si alloys | en |
dc.subject | nanostructure | en |
dc.title | N-type SiGe heterostructures for THz intersubband transitions | en |
dc.type | conferenceObject | en |
dc.subject.miur | Settori Disciplinari MIUR::Scienze fisiche::FISICA DELLA MATERIA | en |
dc.subject.miur | Scienze fisiche | - |
dc.subject.isicrui | Categorie ISI-CRUI::Scienze fisiche::Applied Physics/Condensed Matter/Materials Science | en |
dc.subject.isicrui | Scienze fisiche | - |
dc.subject.anagraferoma3 | Scienze fisiche | en |
dc.relation.pagenumber | 513-514 | en |
dc.relation.conferencename | Conference on Nanotechnology, 2009. IEEE-NANO 2009. 9th IEEE | en |
dc.relation.conferencedate | 2009-07-26 | - |
dc.relation.conferenceplace | Genova | en |
local.test | test | - |
dc.description.romatrecurrent | Dipartimento di Fisica 'Edoardo Amaldi' | * |
item.fulltext | With Fulltext | - |
item.grantfulltext | restricted | - |
item.languageiso639-1 | other | - |
Appears in Collections: | X_Dipartimento di Fisica 'Edoardo Amaldi' ATC - Atti di Convegno |
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