Please use this identifier to cite or link to this item: http://hdl.handle.net/2307/336
Title: Study of the Coupling of Terahertz Radiation to HeterostructureTransistors with a Free Electron Laser Source
Authors: Ortolani, Michele
Di Gaspare, Alessandra
Giovine, Ennio
Evangelisti, Florestano
Foglietti, Vittorio
Doria, Andrea
Gallerano, Gian Piero
Giovenale, Emilio
Messina, Giovanni
Spassovsky, Ivan
Lanzieri, Claudio
Peroni, Marco
Cetronio, Antonio
Keywords: FIELD-EFFECT TRANSISTORS
MILLIMETER-WAVE
Issue Date: Dec-2009
Publisher: Springer US, Boston
Abstract: High electron mobility transistors can work as room-temperature directdetectors of radiation at frequency much higher than their cutofffrequency. Here, we present a tool based on a Free Electron Lasersource to study the detection mechanism and the coupling of the highfrequency signal into the transistor channel. We performed a mappingover a wide area of the coupling of 0.15 THz radiation to an AlGaN/GaNtransistors with cut-off frequency of 30 GHz. Local,polarization-dependent irradiation allowed us to selectively couple thesignal to the channel either directly or through individual transistorbias lines, in order to study the nonlinear properties of thetransistor channel. Our results indicate that HEMT technology can beused to design a millimeter-wave focal plane array with integratedplanar antennas and readout electronics.
URI: http://hdl.handle.net/2307/336
ISSN: 1866-6892
DOI: 10.1007/s10762-009-9567-6
Appears in Collections:A - Articolo su rivista
X_Dipartimento di Fisica 'Edoardo Amaldi'

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