Please use this identifier to cite or link to this item: http://hdl.handle.net/2307/335
Title: Ion beam assisted processes for Pt nanoelectrode fabrication onto 1-Dnanostructures
Authors: Notargiacomo, Andrea
Di Gaspare, Luciana
Evangelisti, Florestano
Keywords: Focused ion beam
Ion beam induced deposition
Nanoelectrodes
One-dimensional structures
Issue Date: Aug-2009
Publisher: Elsevier Science
Abstract: We present morphological and electrical characterizations of thin andnarrow resistors obtained by focused ion beam assisted deposition of Ptbased material.For thin and narrow depositions the measured thickness and width aresignificantly different from the nominal values. From leakage tests wefound that in order to have electrically insulated parallel resistorsat room temperature, it is mandatory that the Pt-halo, which resultsfrom the deposition procedure, has a thickness well below 6 nm. (C)2008 Elsevier Ltd. All rights reserved.
URI: http://hdl.handle.net/2307/335
ISSN: 0749-6036
DOI: 10.1016/j.spmi.2008.11.013
Appears in Collections:A - Articolo su rivista
X_Dipartimento di Fisica 'Edoardo Amaldi'

Files in This Item:
File Description SizeFormat Existing users please Login
09-SM-46-149.pdf454.28 kBAdobe PDF    Request a copy
SFX Query Show full item record Recommend this item

Google ScholarTM

Check

Altmetric

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.