Ion beam assisted processes for Pt nanoelectrode fabrication onto 1-Dnanostructures

Abstract

We present morphological and electrical characterizations of thin andnarrow resistors obtained by focused ion beam assisted deposition of Ptbased material.For thin and narrow depositions the measured thickness and width aresignificantly different from the nominal values. From leakage tests wefound that in order to have electrically insulated parallel resistorsat room temperature, it is mandatory that the Pt-halo, which resultsfrom the deposition procedure, has a thickness well below 6 nm. (C)2008 Elsevier Ltd. All rights reserved.