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Please use this identifier to cite or link to this item: http://hdl.handle.net/2307/335
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dc.contributor.authorNotargiacomo, Andrea-
dc.contributor.authorDi Gaspare, Luciana-
dc.contributor.authorEvangelisti, Florestano-
dc.date.accessioned2010-07-16T12:24:11Z-
dc.date.available2010-07-16T12:24:11Z-
dc.date.issued2009-08-
dc.identifier.issn0749-6036-
dc.identifier.urihttp://hdl.handle.net/2307/335-
dc.description.abstractWe present morphological and electrical characterizations of thin andnarrow resistors obtained by focused ion beam assisted deposition of Ptbased material.For thin and narrow depositions the measured thickness and width aresignificantly different from the nominal values. From leakage tests wefound that in order to have electrically insulated parallel resistorsat room temperature, it is mandatory that the Pt-halo, which resultsfrom the deposition procedure, has a thickness well below 6 nm. (C)2008 Elsevier Ltd. All rights reserved.en
dc.language.isoenen
dc.publisherElsevier Scienceen
dc.relation.ispartofSuperlattices and microstructuresen
dc.subjectFocused ion beamen
dc.subjectIon beam induced depositionen
dc.subjectNanoelectrodesen
dc.subjectOne-dimensional structuresen
dc.titleIon beam assisted processes for Pt nanoelectrode fabrication onto 1-Dnanostructuresen
dc.typeArticleen
dc.subject.miurSettori Disciplinari MIUR::Scienze fisicheen
dc.subject.miurScienze fisiche-
dc.subject.isicruiCategorie ISI-CRUI::Scienze fisicheen
dc.subject.isicruiScienze fisiche-
dc.subject.anagraferoma3Scienze fisicheen
dc.relation.volumenumber46en
dc.relation.pagenumber149-152en
dc.identifier.doi10.1016/j.spmi.2008.11.013-
dc.relation.issuenumber1-2en
dc.description.romatrecurrentDipartimento di Fisica 'Edoardo Amaldi'*
item.languageiso639-1other-
item.grantfulltextrestricted-
item.fulltextWith Fulltext-
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