Please use this identifier to cite or link to this item: http://hdl.handle.net/2307/385
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dc.contributor.authorFrucci, Giulia-
dc.date.accessioned2010-07-30T09:57:10Z-
dc.date.available2010-07-30T09:57:10Z-
dc.date.issued2009-07-26-
dc.identifier.issn1944-9399-
dc.identifier.urihttp://hdl.handle.net/2307/385-
dc.description.abstractWe present a study of the conductance of quantum point contacts fabricated in AlGaN/GaN and Si/SiGe heterostructures. The investigated devices differ for typology (split gates and etched devices, respectively) and for the resulting potential profiles. We observe conductance quantization in multiple of 2e2/h units with superimposed anomalous plateaus and/or structures suggesting that correlation effects should be included in the description of our 1D systems.en
dc.language.isoen_USen
dc.publisherIEEEen
dc.subjectelectronic transport , quantum point contact , valley splittingen
dc.titleConductance anomalies in quantum point contactsen
dc.typeconferenceObjecten
dc.subject.miurSettori Disciplinari MIUR::Scienze fisicheen
dc.subject.miurScienze fisiche-
dc.subject.isicruiCategorie ISI-CRUI::Scienze fisicheen
dc.subject.isicruiScienze fisiche-
dc.subject.anagraferoma3Scienze fisicheen
dc.relation.pagenumber190-193en
dc.relation.conferencenameNanotechnology, 2009. IEEE-NANO 2009en
dc.relation.conferencedate2009-07-26-
dc.relation.conferenceplaceGenovaen
local.testtest-
dc.description.romatrecurrentDipartimento di Fisica 'Edoardo Amaldi'*
item.fulltextWith Fulltext-
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item.languageiso639-1other-
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