Utilizza questo identificativo per citare o creare un link a questo documento:
http://hdl.handle.net/2307/385| Campo DC | Valore | Lingua |
|---|---|---|
| dc.contributor.author | Frucci, Giulia | - |
| dc.date.accessioned | 2010-07-30T09:57:10Z | - |
| dc.date.available | 2010-07-30T09:57:10Z | - |
| dc.date.issued | 2009-07-26 | - |
| dc.identifier.issn | 1944-9399 | - |
| dc.identifier.uri | http://hdl.handle.net/2307/385 | - |
| dc.description.abstract | We present a study of the conductance of quantum point contacts fabricated in AlGaN/GaN and Si/SiGe heterostructures. The investigated devices differ for typology (split gates and etched devices, respectively) and for the resulting potential profiles. We observe conductance quantization in multiple of 2e2/h units with superimposed anomalous plateaus and/or structures suggesting that correlation effects should be included in the description of our 1D systems. | en |
| dc.language.iso | en_US | en |
| dc.publisher | IEEE | en |
| dc.subject | electronic transport , quantum point contact , valley splitting | en |
| dc.title | Conductance anomalies in quantum point contacts | en |
| dc.type | conferenceObject | en |
| dc.subject.miur | Settori Disciplinari MIUR::Scienze fisiche | en |
| dc.subject.miur | Scienze fisiche | - |
| dc.subject.isicrui | Categorie ISI-CRUI::Scienze fisiche | en |
| dc.subject.isicrui | Scienze fisiche | - |
| dc.subject.anagraferoma3 | Scienze fisiche | en |
| dc.relation.pagenumber | 190-193 | en |
| dc.relation.conferencename | Nanotechnology, 2009. IEEE-NANO 2009 | en |
| dc.relation.conferencedate | 2009-07-26 | - |
| dc.relation.conferenceplace | Genova | en |
| local.test | test | - |
| dc.description.romatrecurrent | Dipartimento di Fisica 'Edoardo Amaldi' | * |
| item.languageiso639-1 | other | - |
| item.fulltext | With Fulltext | - |
| item.grantfulltext | restricted | - |
| È visualizzato nelle collezioni: | X_Dipartimento di Fisica 'Edoardo Amaldi' ATC - Atti di Convegno | |
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