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Please use this identifier to cite or link to this item: http://hdl.handle.net/2307/314
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dc.contributor.authorDe Seta, Monica-
dc.contributor.authorCapellini, Giovanni-
dc.contributor.authorBusby, Yan-
dc.contributor.authorEvangelisti, Florestano-
dc.contributor.authorOrtolani, Michele-
dc.contributor.authorVirgilio, Michele-
dc.contributor.authorGrosso, Giuseppe-
dc.contributor.authorPizzi, Giovanni-
dc.contributor.authorNucara, Alessandro-
dc.contributor.authorLupi, Stefano-
dc.date.accessioned2010-07-13T09:13:58Z-
dc.date.available2010-07-13T09:13:58Z-
dc.date.issued2009-08-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/2307/314-
dc.description.abstractIn this letter we present the experimental evidence of intersubbandabsorption in the conduction band of compressively strained germaniumquantum wells bounded by Ge-rich SiGe barriers. The measured absorptionenergies are in the terahertz range and are interpreted by means oftight binding calculations which include self-consistent band-bendingand depolarization effects. From the comparison of experimental andnumerical results a conduction band offset along the L line of about120 meV has been estimated for the studied heterostructures.en
dc.language.isoenen
dc.publisherAmerican Institute of Physicsen
dc.relation.ispartofApplied Physics Lettersen
dc.subjectcascade emittersen
dc.subjectelectroluminescenceen
dc.subjectheterostructuresen
dc.subjectphysicsen
dc.subjectdevicesen
dc.titleConduction band intersubband transitions in Ge/SiGe quantum wellsen
dc.typeArticleen
dc.subject.miurSettori Disciplinari MIUR::Scienze fisicheen
dc.subject.miurScienze fisiche-
dc.subject.isicruiCategorie ISI-CRUI::Scienze fisicheen
dc.subject.isicruiScienze fisiche-
dc.subject.anagraferoma3Scienze fisicheen
dc.relation.volumenumber95en
dc.relation.pagenumber051918-051918-3en
dc.identifier.doi10.1063/1.3198204-
dc.relation.issuenumber5en
dc.description.romatrecurrentDipartimento di Fisica 'Edoardo Amaldi'*
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item.languageiso639-1other-
item.fulltextWith Fulltext-
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